Abstract:
Intrinsic Field in an M-I-.M ( metal-insulator-metal) structure is an important consideration in .the design of some thin film devices as proposed by Mead+t. Simmons demo-nstrated the existence of intrinsic field inside the M-I-M-structures with dissimilar electrodes. The naturally grown aluminium oxide in dry oxugen was used as insulator in his work, However in this work the dependence of the internal field on insulator thickness was not studied. Present investigat-ions consitute•a systematic thickness dependence studies of internal field in metal-insulator-metal structures with Langmuir films of barium palmitate, barium margarate, barium stearate and stearic acid as insulating films. The different electrodes deposited at the two faces of the dielectric are aluminium as the base electrode and tin, silver, bismuth, lead and tellurium as the top electrodes....
