AN ANALYTICAL STUDY OE DOUBLE--GATE MOSFET

dc.contributor.author	Sharma, Shweta
dc.date.accessioned	2014-10-05T07:23:59Z
dc.date.available	2014-10-05T07:23:59Z
dc.date.issued	2004
dc.identifier	M.Tech	en_US
dc.identifier.uri	http://hdl.handle.net/123456789/3951
dc.guide	Sarkar, S.
dc.guide	Tondon, V. K.
dc.description.abstract	In the present work, an improved analytical model for current-voltage relationship for DGMOSFET is developed by taking into account the effects ofMulti-subband occupancy and Drain Induced Barrier Lowering (DIBL). The current-voltage characteristics obtained by the use of this model are compared with experimental and simulation results reported in literature. The effects of backscattering on current-volatge characteristics are also studied.	en_US
dc.language.iso	en	en_US
dc.subject	PHYSICS	en_US
dc.subject	MOSFET	en_US
dc.subject	DOUBLE GATE	en_US
dc.subject	DGMOSFET	en_US
dc.title	AN ANALYTICAL STUDY OE DOUBLE--GATE MOSFET	en_US
dc.type	M.Tech Dessertation	en_US
dc.accession.number	G11799	en_US