Abstract:
Semiconductor superlattices and quantum-well heterostructures form an
important class of electronic and optoelectronic materials since the properties
of these layered structures are in many ways superior to those of bulk materials.
While most superlattices and quantum-well heterostructures are grown using
lattice-matched materials, structures composed of lattice-matched heterolayers
are also of considerable interest since the loosening of the lattice-matching
constraint allows increased flexibility in choosing constituent materials.
Although strained-layer superlattices (SLS) were first studied in the early
1970's, a significant fraction of strained-layer work has occurred in the past
years. Comprehensive reviews of strained-layer structures in several different
semiconductor material systems are available. Progress in the fabrication of
pseudomorphic semiconductor structures has led to the development of photoexcited
lasers, quantun-wcll injection lasers, light-emitting diodes, photodetcctors and
high electron mobility transistors, which utilize strained layers. Although electronic
and optoelectronic devices often utilize SLS quantum-well heterostructures,
studies of pseudomorphic material properties tend to emphasize on superlattice
structures composed of multiple interacting strained layers. In properly designed
strained-layer structures, the mismatched layer is so thin that the difference in
lattice constants of the constituent materials is accommodated by elastic strain
rather than by the generation of misfit dislocations. Thus, strained-layer structures
of high crystalline quality can be fabricated from semiconductors differing signi
ficantly in their bulk lattice constants, provided layer thicknesses do not exceed
strain-dependent critical values. Variety of expitaxial growth methods like LPE,
VPE, MOCVD, MBE are available for fabrication of high quality structures.
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Characterization of grown SLS is possible with optical and electrical
measurements, transmission electron microscopy, and double crystal X-ray diffrac
tion, etc. Double crystal X-ray diffraction is a nondestructive method. The
rocking curves obtained experimentally can not give all the necessary and required
structural details of the individual layers. If the SLS structures undergoes any
thermal treatment, diffusion of impurity, ion-implantation etc., then a knowledge
of the effects of such processes near the interface is important. Also these
processes cause disordering of the SLS structures due to intermixing.
The use of X-ray double crystal diffraction technique in characterizing
multilayer structure by means of experimental rocking curves is,however, compli
cated since the rocking curves in general are of complex nature in which there
is no longer one-to-one correlation between diffraction peaks and individual
layers in the structure. This problem is overcome by using dynamical scattering
theory to generate simulated rocking curves based on an assumed material
structure. The theoretical and experimental rocking curves are then matched by
an iterative process whereby the assumed distribution of strain in the layers is
modified until a good fit is obtained with the. experimental data.
A careful study of existing literature shows that kinematical theory as
well as dynamical theory of X-ray diffraction are two well known models based
on which rocking curves can be simulated. The kinematical theory model has
been used by a number of workers in view of its simplicity, while very few have
worked with dynamical theory and no dynamical treatment have been used for
the study of impurity diffused or ionimplanted SLS. The kinematical theory*
however, is not applicable to heteroepitaxial layer or implanted layers with
thicknesses that are a significant fraction of the extinction distance. The kine
matical theory ignores extinction effects. When the reflecting power is more
than about 6% the kinematical theory is not suitable.
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Keeping in view all these points in the present studies,a dynamical theory
has been preferred. Two dynamical models are presented. One is based on Takagi-
Taupin's derivation and the other one based on Abeles' matrix method. In
the simulation, a one dimensional strain variation is assumed normal to the
sample surface i.e. the epilayers are elastically strained under a tetragonal
distortion and are lattice-matched in the plane of the sample surface. For
this type of unidirectional strain variation the well known Takagi-Taupin equations
have been simplified and solved for epilayers of SLS structure, to give the
ratio of the diffracted to incident beam amplitudes. For the calculation of
layer reflectivity the epilayers in the SLS structure is divided into thin uniform
laminae each of constant lattice-parameter and the reflectivity calculated by
starting at the substrate and working upwards through each layer to the top
layer. Finally rocking curves were convoluted with the reference crystal rocking
curve. Some illustrative examples of simulated rocking curves using different
combinations of composition, thickness, and number of periods of SLS structures
have been shown. Further rocking curves of a number of SLS experimental
specimens namely InGaAs/GaAs, InGaAs/InP, and GaAsP/GaP reported in the
literature have been simulated and a comparis on is made. Initial data from
experimental rocking curves were used to calculate rocking curves for SLS
structure. The input data are slightly adjusted about their initial values until a
reasonable fit with experimental curve is achieved. For the initial data a know
ledge of thickness, number of periods, mismatch variation of layers within
each period is required. These can be obtained from SLS growth conditions.
From such a comparis on an accurate assessment of composition, mismatch,
thickness of period and number of molecular layers have been achieved.
The simulation technique has also been successfully applied to characterize
thermally annealed and Zn diffused disordered InGaAs/GaAs SLS. For thermally
annealed super-lattices the composition in the real space, assuming a simple
linear diffusion mechanism in a single well has been considered while for Zn
diffused disordered superJattice the interstitial and substitutional mechanism has
been used to calculate the composition profiles.
Further, modification of this technique have been used to assess the strain/
damage depth distribution in an ionimplanted SLS structure. In this approach
the strained-material is modeled as a series of laminea each with a perpendicular
strain and damage assumed uniform. Damage is assumed as a random displace
ment of atoms from their lattice sites. This was taken to have the form of
a spherically symmetric Gaussian function with standard deviation U. The
lattice damage and additional strain in Beryllium implanted GaAsP/GaP SLS
structure have been assessed by comparison of an experimental with simulated
rocking curve.
In the Abeles' matrix method a 2x2 matrix is described to compute
reflection and transmission of light by plane layered media in which the refractive
index is isotropic and varies only in the direction normal to the layers. The
method can be used to find solutions for dynamical theory of X-ray diffraction
if variation of X-ray refractive index normal to any sets of Bragg planes of
interest is known. In the present thesis Abeles' dynamic approach has been
successfully applied to simulate rocking curves for the SLS structures. Rocking
curves simulated for different composition, thickness of epilayers, and number
of periods of SLS' structures have been studied extensively and compared with
those simulated by Takagi-Taupin's model. Comparison showed that the Abeles'
approach need less computation time and gives more sharp peaks. The approaches
of Takagi-Taupin and Abeles' were both used to simulate rocking curves for
an experimental InGaAs/GaAs SLS structure. The satellite peak intensities
thus calculated were compared with those calculated from kinematical approach
and experimental data. A three crystal X-ray scan of InGaAs/InP superlattice
structure reported in the literature have also been simulated using the Abeles-
Takagi approach and a comparison is made with kinematical step model.
On the basis of the comparison final conclusions are made.