Abstract:
This work mainly emphases on the fabrication of VO2 switch, in which thin film deposition was done using rf sputtering from V2O5 Target. The deposited VO2 films were characterized by four probe I-V measurement system, Spectrum Analyzer, XRD (X-ray diffraction, XPS (x-ray photoelectron spectroscopy). The I-V characteristics show that characteristics of electrically driven Metal Insulator transition in VO2 switch and effect of temperature on it, XRD patterns show that presence of VO2 in the device & Power spectral density shows that VO2 is ultra-low noise material. Addition with the characterization of the VO2 switch this work also a novel circuit model of two terminal VO2 switches using a new approach that is Bode plot & Transfer function approach, and with the help of Bode Plot & Nyquist plot explains the stability of the system using MATLAB. After this using SPICE Cadence simulation, this work describes the switching time of metal to insulator transition for circuit model of the VO2 switch & and compare it with an experimental switching time of the VO2 switch
