Abstract:
With decreasing size of MOS transistor the thickness of gate oxide (S 102) is reaching in regime
where it is just 2-3 atomic layers thick about Ito 1.5 nm thick because of thin oxide layers there is
direct tunnelling of charge carriers through gate oxide, and the transport of charge carriers through
defects in gate oxide. The increasing leakage current through gate oxide is proving to be a show
stopper to the scaling of MOS transistor, and saturating the Moore's Law. For the applications,
where the devices are need to be fabricated on plastic, glass or poly-crystalline silicon substrates a
good quality of oxide is required to be grown at low temperatures. In this work a low temperature,
defect free oxide growth technique using ozone is presented and we study the effect of various
ambient temperatures on growth of Si02 , the effect of pre cleaning and passivation on quality of
ozone grown oxide in terms of bulk defect density, Si-Si02 interface trap charge density and on
oxide life time is presented
