SWITCHABLE PHOTODETECTOR USING PHASE CHANGE MATERIAL Ge2Sb2Te5

dc.contributor.author	Kushwaha, Suyash
dc.date.accessioned	2024-02-22T04:37:57Z
dc.date.available	2024-02-22T04:37:57Z
dc.date.issued	2019-05
dc.identifier.uri	http://localhost:8081/xmlui/handle/123456789/15616
dc.description.abstract	This thesis reports the possibility of development of a broader range photodetector which could efficiently work in multiple wavelength ranges from conventional communication band to near infrared band. This device is developed by silicon-on-insulator platform in silicon photonics by using phase change material Ge2Sb2Te5 (GST). All the simulations are done in CST microwave studio. Every possible effort has been made at time of designing to optimise important parameters of photodetector device such as, absorption, responsivity, quantum efficiency etc. I have summarized results and analysed some sensitive and non-sensitive parameters	en_US
dc.description.sponsorship	INDIAN INSTITUTE OF TECHNOLOGY ROORKEE	en_US
dc.language.iso	en	en_US
dc.publisher	I I T ROORKEE	en_US
dc.subject	Possibility	en_US
dc.subject	CST Microwave	en_US
dc.subject	Photodetector	en_US
dc.subject	Summarized Results	en_US
dc.title	SWITCHABLE PHOTODETECTOR USING PHASE CHANGE MATERIAL Ge2Sb2Te5	en_US
dc.type	Other	en_US