Abstract:
This thesis reports the possibility of development of a broader range photodetector which could efficiently work in multiple wavelength ranges from conventional communication band to near infrared band. This device is developed by silicon-on-insulator platform in silicon photonics by using phase change material Ge2Sb2Te5 (GST). All the simulations are done in CST microwave studio. Every possible effort has been made at time of designing to optimise important parameters of photodetector device such as, absorption, responsivity, quantum efficiency etc. I have summarized results and analysed some sensitive and non-sensitive parameters
