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OPTICAL AND ELECTRICAL PROPERTIES OF ZnO/A92O HETEROSTRUCTURES

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dc.contributor.author Shukla, Harsh Vardhan
dc.date.accessioned 2023-07-14T11:54:14Z
dc.date.available 2023-07-14T11:54:14Z
dc.date.issued 2014-06
dc.identifier.uri http://localhost:8081/xmlui/handle/123456789/15567
dc.description.abstract Heterojunction based devices are playing pivotal role in many applications. These devices have shown better performance than bulk devices. Heterostructures are used to provide high performance in optoelectronic devices. In this dissertation work formation of a heterojunction of Ag2O and AlZnO is intended on glass substrate by pulsed laser deposition. First on glass substrate thin film of Ag2O is deposited and its electrical and optical properties have been studied. Then AlZnO film is deposited over the Ag2O film and electrical measurements have been performed. Band gap, conductivity and lattice parameters of Ag2O films have been calculated. en_US
dc.description.sponsorship INDIAN INSTITUTE OF TECHNOLOGY ROORKEE en_US
dc.language.iso en en_US
dc.publisher IIT ROORKEE en_US
dc.subject Heterostructures en_US
dc.subject Optoelectronic Devices en_US
dc.subject Ag2O and AlZnO en_US
dc.subject Electrical Measurements en_US
dc.title OPTICAL AND ELECTRICAL PROPERTIES OF ZnO/A92O HETEROSTRUCTURES en_US
dc.type Other en_US


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