Abstract:
Heterojunction based devices are playing pivotal role in many applications. These
devices have shown better performance than bulk devices. Heterostructures are used to
provide high performance in optoelectronic devices. In this dissertation work formation
of a heterojunction of Ag2O and AlZnO is intended on glass substrate by pulsed laser
deposition. First on glass substrate thin film of Ag2O is deposited and its electrical and
optical properties have been studied. Then AlZnO film is deposited over the Ag2O film
and electrical measurements have been performed. Band gap, conductivity and lattice
parameters of Ag2O films have been calculated.
