MULTILAYER MICROMAGNETIC MODELS FOR ALL SPIN LOGIC

Abstract

The complementary metal oxide semiconductor (CMOS) industry is successful in scaling according to Moore’s law. The scaling has disadvantages in terms of short channel effects such as quantum mechanical tunnelling, mobility degradation, hot carrier effects, drain induced barrier lowering, etc. The spin based devices emerged as an energy efficient alternative to CMOS technology. The discovery of spin transfer torque effect has revolutionized the field of spintronics and has given a new dimension to the information storage and processing in the last decade. All Spin Logic (ASL), a class of spin based devices are studied in the report. ASL devices use spin current as medium for information transfer. The ferromagnets (FMs) are used as storage elements with the help of their magnetization state. The lumped and distributed spin circuit modeling of All Spin Logic Devices (ASLD) and universal gate structure is described. Also, multilayer structures are formed for ASLD and universal gate structure. The micromagnetic analysis of ASLD and universal gate structure is performed by capturing the spin transport and LLG dynamics in a tool command language (TCL) script to make it compatible with object oriented micromagnetic framework (OOMMF).