Please use this identifier to cite or link to this item: http://localhost:8081/xmlui/handle/123456789/9751
Title: IMPROVED SINGLE TRANSISTOR EQUIVALENT FOR CMOS INVERTER
Authors: Dutta, Arindam
Keywords: ELECTRONICS AND COMPUTER ENGINEERING;IMPROVED SINGLE TRANSISTOR EQUIVALENT;CMOS INVERTER;SINGLE TRANSISTOR MODEL
Issue Date: 2002
Abstract: The development of an equivalent single transistor model of a CMOS inverter is considered . It is shown that the channel lengths of the equivalent single transistors - for both high-to-low and low-to-high transitions are not equal to those of original transistors . An average of the equivalent transistor lengths obtained from 50% and 90% delays, yield minimum error in output voltage evaluation .. The analytical procedure also takes into account various possible conduction states (linear , saturation and cut-off) of the original transistors during the input transition periods .
URI: http://hdl.handle.net/123456789/9751
Other Identifiers: M.Tech
Research Supervisor/ Guide: Sarkar, S.
metadata.dc.type: M.Tech Dessertation
Appears in Collections:MASTERS' DISSERTATIONS (E & C)

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