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|Title:||IMPROVED SINGLE TRANSISTOR EQUIVALENT FOR CMOS INVERTER|
|Keywords:||ELECTRONICS AND COMPUTER ENGINEERING;IMPROVED SINGLE TRANSISTOR EQUIVALENT;CMOS INVERTER;SINGLE TRANSISTOR MODEL|
|Abstract:||The development of an equivalent single transistor model of a CMOS inverter is considered . It is shown that the channel lengths of the equivalent single transistors - for both high-to-low and low-to-high transitions are not equal to those of original transistors . An average of the equivalent transistor lengths obtained from 50% and 90% delays, yield minimum error in output voltage evaluation .. The analytical procedure also takes into account various possible conduction states (linear , saturation and cut-off) of the original transistors during the input transition periods .|
|Research Supervisor/ Guide:||Sarkar, S.|
|Appears in Collections:||MASTERS' DISSERTATIONS (E & C)|
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