1. Shodhbhagirathi @ IITR
  2. ELECTRONICS AND COMMUNICATION ENGINEERING (FORMERLY ELECTRONICS & COMPUTER ENGINEERING)
  3. MASTERS' THESES (E & C)
Please use this identifier to cite or link to this item: http://localhost:8081/xmlui/handle/123456789/9662
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dc.contributor.authorSekhar, Murthy Chandra-
dc.date.accessioned2014-11-20T05:16:11Z-
dc.date.available2014-11-20T05:16:11Z-
dc.date.issued1999-
dc.identifierM.Techen_US
dc.identifier.urihttp://hdl.handle.net/123456789/9662-
dc.guideSarkar, S.-
dc.description.abstractThis work deals with the conditions for Zero-Temperature-Coefficient (ZTC) of drain current for n-MOS case for Uniform and Gaussian doping profiles. Here the effect of device scaling on Zero-Temperature-Coefficient operating point is also estimated. It is found that as the device is miniaturized, the Zero-Temperature-Coefficient (ZTC) operating point decrease. (en_US
dc.language.isoenen_US
dc.subjectELECTRONICS AND COMPUTER ENGINEERINGen_US
dc.subjectZTC-OPERATING POINTen_US
dc.subjectVLSI MOSFETsen_US
dc.subjectDRAIN CURRENTen_US
dc.titleA STUDY OF ZTC-OPERATING POINT OF VLSI MOSFETsen_US
dc.typeM.Tech Dessertationen_US
dc.accession.numberG10041en_US
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