Please use this identifier to cite or link to this item: http://localhost:8081/xmlui/handle/123456789/9662
Title: A STUDY OF ZTC-OPERATING POINT OF VLSI MOSFETs
Authors: Sekhar, Murthy Chandra
Keywords: ELECTRONICS AND COMPUTER ENGINEERING;ZTC-OPERATING POINT;VLSI MOSFETs;DRAIN CURRENT
Issue Date: 1999
Abstract: This work deals with the conditions for Zero-Temperature-Coefficient (ZTC) of drain current for n-MOS case for Uniform and Gaussian doping profiles. Here the effect of device scaling on Zero-Temperature-Coefficient operating point is also estimated. It is found that as the device is miniaturized, the Zero-Temperature-Coefficient (ZTC) operating point decrease. (
URI: http://hdl.handle.net/123456789/9662
Other Identifiers: M.Tech
Research Supervisor/ Guide: Sarkar, S.
metadata.dc.type: M.Tech Dessertation
Appears in Collections:MASTERS' DISSERTATIONS (E & C)

Files in This Item:
File Description SizeFormat 
ECDG10041.pdf1.83 MBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.