Please use this identifier to cite or link to this item:
http://localhost:8081/xmlui/handle/123456789/9662| Title: | A STUDY OF ZTC-OPERATING POINT OF VLSI MOSFETs |
| Authors: | Sekhar, Murthy Chandra |
| Keywords: | ELECTRONICS AND COMPUTER ENGINEERING;ZTC-OPERATING POINT;VLSI MOSFETs;DRAIN CURRENT |
| Issue Date: | 1999 |
| Abstract: | This work deals with the conditions for Zero-Temperature-Coefficient (ZTC) of drain current for n-MOS case for Uniform and Gaussian doping profiles. Here the effect of device scaling on Zero-Temperature-Coefficient operating point is also estimated. It is found that as the device is miniaturized, the Zero-Temperature-Coefficient (ZTC) operating point decrease. ( |
| URI: | http://hdl.handle.net/123456789/9662 |
| Other Identifiers: | M.Tech |
| Research Supervisor/ Guide: | Sarkar, S. |
| metadata.dc.type: | M.Tech Dessertation |
| Appears in Collections: | MASTERS' THESES (E & C) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| ECDG10041.pdf | 1.83 MB | Adobe PDF | View/Open |
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