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|Title:||A STUDY OF ZTC-OPERATING POINT OF VLSI MOSFETs|
|Authors:||Sekhar, Murthy Chandra|
|Keywords:||ELECTRONICS AND COMPUTER ENGINEERING;ZTC-OPERATING POINT;VLSI MOSFETs;DRAIN CURRENT|
|Abstract:||This work deals with the conditions for Zero-Temperature-Coefficient (ZTC) of drain current for n-MOS case for Uniform and Gaussian doping profiles. Here the effect of device scaling on Zero-Temperature-Coefficient operating point is also estimated. It is found that as the device is miniaturized, the Zero-Temperature-Coefficient (ZTC) operating point decrease. (|
|Research Supervisor/ Guide:||Sarkar, S.|
|Appears in Collections:||MASTERS' DISSERTATIONS (E & C)|
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