Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/9618
Title: A STUDY _ OF MESFET TRANSCONDUCTANCE BY USING LINEARLY GRADED SUBSTRATE-CHANNEL JUNCTION. MODEL
Authors: Kumar, Dhirendra
Keywords: ELECTRONICS AND COMPUTER ENGINEERING
MESFET TRANSCONDUCTANCE
LINEARLY GRADED SUBSTRATE-CHANNEL JUNCTION MODEL
CHANNEL-SUBSTRATE JUNCTION
Issue Date: 1999
Abstract: Previously channel-substrate junction in ion-implanted MESFET was assumed to be abrupt junction. With the assumption of abrupt junction many expressions for useful quantities like threshold voltage and transonductance have already been given. But in reality, the assumption of abrupt junction. is not true and channel-substrate junction in ion implanted MESFET is linearly graded junction. The expression for threshold voltage considering linearly graded junction gives nearly same result as experimental results available in literature. In present work using this accurate threshold voltage expression, transconductance (gm) of the MESFET has been calculated. It has been compared with previous existing curves. Further, transconductance (g;n) has been calculated by varying important parameters viz, temperature, implantation energy, cap layer thickness, substrate bias voltage and doping concentration etc. Finally the effect of these variations on transconductance has been discussed.
URI: http://hdl.handle.net/123456789/9618
Other Identifiers: M.Tech
Appears in Collections:MASTERS' DISSERTATIONS (E & C)

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