AN ANALYTICAL STUDY OF SCHOTTKY BARRIER HEIGHT TAILORING

Abstract

One of the difficulties faced in '' realizing complementary MESFET's is the low barrier height of conventional p-MESFET's. The barrier height of a p-MESFET could be increased by implanting a shallow surface layer of a n-type impurity. Here, we study the effect of such an implant on the threshold voltage of a GaAs p-MESFET, ideality factor of its Schottky contact , its gate capacitance and its gate reverse current. The most important consideration i.e. the limit to which barrier height could be increased has been discussed.