1. Shodhbhagirathi @ IITR
  2. ELECTRONICS AND COMMUNICATION ENGINEERING (FORMERLY ELECTRONICS & COMPUTER ENGINEERING)
  3. MASTERS' THESES (E & C)
Please use this identifier to cite or link to this item: http://localhost:8081/jspui/handle/123456789/9565
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dc.contributor.authorReen, Pinku-
dc.date.accessioned2014-11-19T13:05:18Z-
dc.date.available2014-11-19T13:05:18Z-
dc.date.issued1997-
dc.identifierM.Techen_US
dc.identifier.urihttp://hdl.handle.net/123456789/9565-
dc.guideSarkar, S.-
dc.description.abstractConsidering the space charge instabilities that exists in a GaAs Gunn Diode, a software to simulate the operation of such a diode has been developed. Given dimensions, doping, bias voltage and frequency as the input data, the software determines optimum RF voltage, negative conductance and power output of the device. Furthermore, the propagation of the high field domain from cathode to anode is simulated. The results obtained are comparable with data available in literature.en_US
dc.language.isoenen_US
dc.subjectELECTRONICS AND COMPUTER ENGINEERINGen_US
dc.subjectCOMPUTER SIMULATIONen_US
dc.subjectGUNN DIODEen_US
dc.subjectHIGH FIELD DOMAINen_US
dc.titleCOMPUTER SIMULATION OF GUNN DIODEen_US
dc.typeM.Tech Dessertationen_US
dc.accession.number247462en_US
Appears in Collections:MASTERS' THESES (E & C)

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