1. Shodhbhagirathi @ IITR
  2. ELECTRONICS AND COMMUNICATION ENGINEERING (FORMERLY ELECTRONICS & COMPUTER ENGINEERING)
  3. MASTERS' THESES (E & C)
Please use this identifier to cite or link to this item: http://localhost:8081/xmlui/handle/123456789/9546
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dc.contributor.authorSalgiya, Sudhanshu-
dc.date.accessioned2014-11-19T12:44:12Z-
dc.date.available2014-11-19T12:44:12Z-
dc.date.issued1996-
dc.identifierM.Techen_US
dc.identifier.urihttp://hdl.handle.net/123456789/9546-
dc.guideSarkar, S.-
dc.description.abstractThis work deals with the conditions for zero temperature coefficient of drain current for n - GaAs MESFET. Cases of uniform and arbitrary doping profiles (exponential and gaussian profile) are showed.Finally Vg(ZTC) is determined for scaled MESFETS.en_US
dc.language.isoenen_US
dc.subjectELECTRONICS AND COMPUTER ENGINEERINGen_US
dc.subjectDEVICE SCALINGen_US
dc.subjectMESFET GATE BIAS VOLTAGEen_US
dc.subjectDRAIN CURRENT ZERO TEMPERATURE COEFFICIENTen_US
dc.titleEFFECT OF DEVICE SCALING ON MESFET GATE BIAS VOLTAGE FOR DRAIN CURRENT ZERO TEMPERATURE COEFFICIENTen_US
dc.typeM.Tech Dessertationen_US
dc.accession.number247439en_US
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