Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/9546
Title: EFFECT OF DEVICE SCALING ON MESFET GATE BIAS VOLTAGE FOR DRAIN CURRENT ZERO TEMPERATURE COEFFICIENT
Authors: Salgiya, Sudhanshu
Keywords: ELECTRONICS AND COMPUTER ENGINEERING
DEVICE SCALING
MESFET GATE BIAS VOLTAGE
DRAIN CURRENT ZERO TEMPERATURE COEFFICIENT
Issue Date: 1996
Abstract: This work deals with the conditions for zero temperature coefficient of drain current for n - GaAs MESFET. Cases of uniform and arbitrary doping profiles (exponential and gaussian profile) are showed.Finally Vg(ZTC) is determined for scaled MESFETS.
URI: http://hdl.handle.net/123456789/9546
Other Identifiers: M.Tech
Appears in Collections:MASTERS' DISSERTATIONS (E & C)

Files in This Item:
File Description SizeFormat 
ECD247439.pdf1.1 MBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.