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http://localhost:8081/xmlui/handle/123456789/9546| Title: | EFFECT OF DEVICE SCALING ON MESFET GATE BIAS VOLTAGE FOR DRAIN CURRENT ZERO TEMPERATURE COEFFICIENT |
| Authors: | Salgiya, Sudhanshu |
| Keywords: | ELECTRONICS AND COMPUTER ENGINEERING;DEVICE SCALING;MESFET GATE BIAS VOLTAGE;DRAIN CURRENT ZERO TEMPERATURE COEFFICIENT |
| Issue Date: | 1996 |
| Abstract: | This work deals with the conditions for zero temperature coefficient of drain current for n - GaAs MESFET. Cases of uniform and arbitrary doping profiles (exponential and gaussian profile) are showed.Finally Vg(ZTC) is determined for scaled MESFETS. |
| URI: | http://hdl.handle.net/123456789/9546 |
| Other Identifiers: | M.Tech |
| Research Supervisor/ Guide: | Sarkar, S. |
| metadata.dc.type: | M.Tech Dessertation |
| Appears in Collections: | MASTERS' THESES (E & C) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| ECD247439.pdf | 1.1 MB | Adobe PDF | View/Open |
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