1. Shodhbhagirathi @ IITR
  2. ELECTRONICS AND COMMUNICATION ENGINEERING (FORMERLY ELECTRONICS & COMPUTER ENGINEERING)
  3. MASTERS' THESES (E & C)
Please use this identifier to cite or link to this item: http://localhost:8081/jspui/handle/123456789/9546
Title: EFFECT OF DEVICE SCALING ON MESFET GATE BIAS VOLTAGE FOR DRAIN CURRENT ZERO TEMPERATURE COEFFICIENT
Authors: Salgiya, Sudhanshu
Keywords: ELECTRONICS AND COMPUTER ENGINEERING;DEVICE SCALING;MESFET GATE BIAS VOLTAGE;DRAIN CURRENT ZERO TEMPERATURE COEFFICIENT
Issue Date: 1996
Abstract: This work deals with the conditions for zero temperature coefficient of drain current for n - GaAs MESFET. Cases of uniform and arbitrary doping profiles (exponential and gaussian profile) are showed.Finally Vg(ZTC) is determined for scaled MESFETS.
URI: http://hdl.handle.net/123456789/9546
Other Identifiers: M.Tech
Research Supervisor/ Guide: Sarkar, S.
metadata.dc.type: M.Tech Dessertation
Appears in Collections:MASTERS' THESES (E & C)

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