1. Shodhbhagirathi @ IITR
  2. ELECTRONICS AND COMMUNICATION ENGINEERING (FORMERLY ELECTRONICS & COMPUTER ENGINEERING)
  3. MASTERS' THESES (E & C)
Please use this identifier to cite or link to this item: http://localhost:8081/xmlui/handle/123456789/9510
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dc.contributor.authorrao, D. L. Narasimha-
dc.date.accessioned2014-11-19T10:20:49Z-
dc.date.available2014-11-19T10:20:49Z-
dc.date.issued1998-
dc.identifierM.Techen_US
dc.identifier.urihttp://hdl.handle.net/123456789/9510-
dc.guideSarkar, S.-
dc.description.abstractThis work deals with the temperature sensitivity of ' threshold voltage for Silicon MESFET's with Shannon enhanced barrier voltage. The cases of n-channel and P-channel MESFETS of Normally-ON and Normally-OFF - types are considered. Temperature sensitivity of threshold voltage for Shannon-implanted Si-MESFET is determined.en_US
dc.language.isoenen_US
dc.subjectELECTRONICS AND COMPUTER ENGINEERINGen_US
dc.subjectTEMPERATURE SENSITIVITYen_US
dc.subjectSHANNON IMPLANTED SILICON MESFET THRESHOLD VOLTAGEen_US
dc.subjectSHANNON ENHANCED BARRIER VOLTAGEen_US
dc.titleTEMPERATURE SENSITIVITY OF SHANNON IMPLANTED SILICON MESFET THRESHOLD VOLTAGEen_US
dc.typeM.Tech Dessertationen_US
dc.accession.number248184en_US
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