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http://localhost:8081/xmlui/handle/123456789/9510| Title: | TEMPERATURE SENSITIVITY OF SHANNON IMPLANTED SILICON MESFET THRESHOLD VOLTAGE |
| Authors: | rao, D. L. Narasimha |
| Keywords: | ELECTRONICS AND COMPUTER ENGINEERING;TEMPERATURE SENSITIVITY;SHANNON IMPLANTED SILICON MESFET THRESHOLD VOLTAGE;SHANNON ENHANCED BARRIER VOLTAGE |
| Issue Date: | 1998 |
| Abstract: | This work deals with the temperature sensitivity of ' threshold voltage for Silicon MESFET's with Shannon enhanced barrier voltage. The cases of n-channel and P-channel MESFETS of Normally-ON and Normally-OFF - types are considered. Temperature sensitivity of threshold voltage for Shannon-implanted Si-MESFET is determined. |
| URI: | http://hdl.handle.net/123456789/9510 |
| Other Identifiers: | M.Tech |
| Research Supervisor/ Guide: | Sarkar, S. |
| metadata.dc.type: | M.Tech Dessertation |
| Appears in Collections: | MASTERS' THESES (E & C) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| ECD248184.pdf | 1.45 MB | Adobe PDF | View/Open |
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