1. Shodhbhagirathi @ IITR
  2. ELECTRONICS AND COMMUNICATION ENGINEERING (FORMERLY ELECTRONICS & COMPUTER ENGINEERING)
  3. MASTERS' THESES (E & C)
Please use this identifier to cite or link to this item: http://localhost:8081/jspui/handle/123456789/9510
Title: TEMPERATURE SENSITIVITY OF SHANNON IMPLANTED SILICON MESFET THRESHOLD VOLTAGE
Authors: rao, D. L. Narasimha
Keywords: ELECTRONICS AND COMPUTER ENGINEERING;TEMPERATURE SENSITIVITY;SHANNON IMPLANTED SILICON MESFET THRESHOLD VOLTAGE;SHANNON ENHANCED BARRIER VOLTAGE
Issue Date: 1998
Abstract: This work deals with the temperature sensitivity of ' threshold voltage for Silicon MESFET's with Shannon enhanced barrier voltage. The cases of n-channel and P-channel MESFETS of Normally-ON and Normally-OFF - types are considered. Temperature sensitivity of threshold voltage for Shannon-implanted Si-MESFET is determined.
URI: http://hdl.handle.net/123456789/9510
Other Identifiers: M.Tech
Research Supervisor/ Guide: Sarkar, S.
metadata.dc.type: M.Tech Dessertation
Appears in Collections:MASTERS' THESES (E & C)

Files in This Item:
File Description SizeFormat 
ECD248184.pdf1.45 MBAdobe PDFView/Open
Show full item record


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.