Please use this identifier to cite or link to this item:
http://localhost:8081/xmlui/handle/123456789/9359
Title: | PROCESS PARAMETER VARIATION STUDY OF PHOTORESIST IMAGING |
Authors: | Gangey, Manish |
Keywords: | ELECTRONICS AND COMPUTER ENGINEERING;PROCESS PARAMETER;VARIATION STUDY;PHOTORESIST IMAGING |
Issue Date: | 1993 |
Abstract: | IC fabrication needs have encouraged studies on various sub-processes to improve upon the device density that can be fabricated. The device dimensions have gone down upto 0.2 to 0.4 micron. The most important sub-process which play a determining ole in reducing the device dimensions, is photoresist imaging. In this work, a study of parameter variations on photoresist imaging has been conducted. The effects of exposure time, development time, softbaking, post exposure baking etc. on photo resist pattern have been observed and discussed. A process latitude using Scanning Electron Microscope (SEM) for the Vistak-H positive resist has also been determined which provides very useful information for selecting a resist system for a particular application |
URI: | http://hdl.handle.net/123456789/9359 |
Other Identifiers: | M.Tech |
Research Supervisor/ Guide: | Prakash, Om |
metadata.dc.type: | M.Tech Dessertation |
Appears in Collections: | MASTERS' THESES (E & C) |
Files in This Item:
File | Description | Size | Format | |
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ECD245935.pdf | 3.62 MB | Adobe PDF | View/Open |
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