1. Shodhbhagirathi @ IITR
  2. ELECTRONICS AND COMMUNICATION ENGINEERING (FORMERLY ELECTRONICS & COMPUTER ENGINEERING)
  3. MASTERS' THESES (E & C)
Please use this identifier to cite or link to this item: http://localhost:8081/jspui/handle/123456789/9340
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dc.contributor.authorBhattacharya, Sumita-
dc.date.accessioned2014-11-19T07:30:57Z-
dc.date.available2014-11-19T07:30:57Z-
dc.date.issued1995-
dc.identifierM.Techen_US
dc.identifier.urihttp://hdl.handle.net/123456789/9340-
dc.guideSarkar, S.-
dc.guideAgarwal, R. P.-
dc.description.abstractThe subthreshold operation of a MOSFET is analytically studied. Developing an effective mobility model, the influences of gate voltage, surface scattering and substrate doping on channel mobility and current voltage characteristics have been studied. The theoretical results obtained from the model so developed are compared with the experimental results available in literature. A good agreement between the two is obtained.en_US
dc.language.isoenen_US
dc.subjectELECTRONICS AND COMPUTER ENGINEERINGen_US
dc.subjectMODEL-SUBTHRESHOLD OPERATIONen_US
dc.subjectMOSFETen_US
dc.subjectCHANNEL MOBILITYen_US
dc.titleA MODEL FOR SUBTHRESHOLD OPERATION OF MOSFETen_US
dc.typeM.Tech Dessertationen_US
dc.accession.number246974en_US
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