Please use this identifier to cite or link to this item:
http://localhost:8081/xmlui/handle/123456789/9340| Title: | A MODEL FOR SUBTHRESHOLD OPERATION OF MOSFET |
| Authors: | Bhattacharya, Sumita |
| Keywords: | ELECTRONICS AND COMPUTER ENGINEERING;MODEL-SUBTHRESHOLD OPERATION;MOSFET;CHANNEL MOBILITY |
| Issue Date: | 1995 |
| Abstract: | The subthreshold operation of a MOSFET is analytically studied. Developing an effective mobility model, the influences of gate voltage, surface scattering and substrate doping on channel mobility and current voltage characteristics have been studied. The theoretical results obtained from the model so developed are compared with the experimental results available in literature. A good agreement between the two is obtained. |
| URI: | http://hdl.handle.net/123456789/9340 |
| Other Identifiers: | M.Tech |
| Research Supervisor/ Guide: | Sarkar, S. Agarwal, R. P. |
| metadata.dc.type: | M.Tech Dessertation |
| Appears in Collections: | MASTERS' THESES (E & C) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| ECD246974.pdf | 1.77 MB | Adobe PDF | View/Open |
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