FREQUENCY DEPENDENCE OF SCALED MOSFET-TRANSCONDUCTANCE

Abstract

With the advent of LSI and VLSI, the semiconductor devices have undergone an un-Precexlented miniaturizatLon.• In order to retain the basic device characteristics of the unsealed device, several scaling theories' ave been pro-posed and implemented. In this dissertation, the influence of device scaling on the frequency dependence of the trans-conductance of a MOSFET has been studied. Starting with the basic expression for MOS Trans conductance, various factors affecting it have been identified. From the study of the scaling dependence of these factors, the effect of scaling on the device transconductance is analysed. It is found that inorder to have a scaled MOSFET of high trans,-conductance with a flat frequency-transconductance curve,, some amount of voltage scaling along with dimensional scaling is desirable,