Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/9118
Title: A FABRICATION TECHNIQUE OF ANODIZED THIN-FILM CAPACITOR
Authors: Lakshmana, P. R.
Keywords: ELECTRONICS AND COMPUTER ENGINEERING
ELECTRONICS AND COMPUTER ENGINEERING
ELECTRONICS AND COMPUTER ENGINEERING
ELECTRONICS AND COMPUTER ENGINEERING
Issue Date: 1975
Abstract: Thin. fun 2nte~rotod circuits, being niporior to the eonvcntioncl rumolythic cnd hybrid Integrated circuits to ottioctina ticn czincnt ecicnti8to for Ito fail dovolopzcnt for ncny eh~$1caini epplicationoo Tho roctlfttoc end tho prococs of fabricating this-fi1r 41 t1 0 — Al cepocitor$ for uco In thin-film circutto hovo boon dovelopcd in tho toborotory, The opecirllity of tho procooc to that it ccri bo ovolopgad ov'on In tonebing Institution ,, ero tho focilittos IIId (undo are quite 11lltteda Tho procoozs i t2pio, oconoatco1 cud h1chly rq,rducib1e. A vacuum ewporotor woo ucod to deposit aluminum bocci cd counter olectrodo films* Tho barn cloctrodo tro dopooitod onto hontod bo+roto* 'rho hooting condition a vore optimt cod by oovoro1 oxportmonto, The aluminum o ido diolectric film t,oi formed oloctrochcitc, lly by t.*t cnodinotton of n part of the baco cloctroda. Ccpacitors tiith dioloctric Oros in the rcligo of 0,1 en to 2 c 2 cud dielectric thicitnoac In the rccl3o of 700 AQ toMoo A0 hove boon or a. The offocte of c odi ntton voltage end baking of the dioloctric films on ceyeeitcnco dcncttys dioui.potion factor cad !,rookdom voltage hove boon ntudiod end reported here* :uggocttcn o h rave boon gIvç.a for imp rowing the tochntu oo
URI: http://hdl.handle.net/123456789/9118
Other Identifiers: M.Tech
Appears in Collections:MASTERS' DISSERTATIONS (E & C)

Files in This Item:
File Description SizeFormat 
ECD108392.pdf2.51 MBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.