WIDE BAND COUPLING STRUCTURE FOR PARAMETRIC AMPLIFIER

Abstract

The prMcipie of piaiurio traned.ucere were knbwn since 1831,6 when Michael ro4' gave the aeornical maple of c tions upon the s ao* of r ter which oeoUltee vertically, and he arrived at the conclueian e rim iy that there were two eplete vibrations of the support for each oozplte vibration of the liquid. Hoerr, the development of low noise ifiers that lag paroaetric ainplifter was dlayed until 1957. when the high quality a orator p-n junction diode (va or) became aniible. Psamet nits ampUfiere are of pnary importance for design of low noise microwave receivers, P► et o devices have become increasiflgly laportant during the past few yrs because of their inherent caibility to povid. low not $ amplification throughout the microwave frequency specter.. since its inception, however, the parernetria aipUtier has been p .rud by the problem of having an atre,eYy narrow band reoponee. Numerone researchers have propose& solutions to this problm (1) — (6). Msny techniques, however,, neglect the presence of so is inportant va otor diode parasitic parameter which tend to cause significant dis pancies between predicted and actual respcnee. The basis for optimism lv the problem stems from the belief that by incorporatingthe multiple" w resonator watching networks in the amplifier quit e, broad--band por a is achievable.,