1. Shodhbhagirathi @ IITR
  2. ELECTRONICS AND COMMUNICATION ENGINEERING (FORMERLY ELECTRONICS & COMPUTER ENGINEERING)
  3. MASTERS' THESES (E & C)
Please use this identifier to cite or link to this item: http://localhost:8081/xmlui/handle/123456789/9042
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dc.contributor.authorHas, Chandra-
dc.date.accessioned2014-11-18T08:10:21Z-
dc.date.available2014-11-18T08:10:21Z-
dc.date.issued1984-
dc.identifierM.Techen_US
dc.identifier.urihttp://hdl.handle.net/123456789/9042-
dc.guideSarkar, S.-
dc.description.abstractThe behaviours of individual Gunn diodes in a power Combined Gunn oscilhitar is analysed. It has been found that maximum power is yielded by the individual diodes,when they are of an optimum population. The number of operating diodes also detemine the basic mode of operation. The quenched domain mode has been found to be the most suitable mode for power Combine . operation of the Gunn diodes.en_US
dc.language.isoenen_US
dc.subjectELECTRONICS AND COMPUTER ENGINEERINGen_US
dc.subjectELECTRONICS AND COMPUTER ENGINEERINGen_US
dc.subjectELECTRONICS AND COMPUTER ENGINEERINGen_US
dc.subjectELECTRONICS AND COMPUTER ENGINEERINGen_US
dc.titleBEHAVIOUR OF GUNN DIODES IN MULTIPLE DEVICE OSCILLATOR CIRCUITSen_US
dc.typeM.Tech Dessertationen_US
dc.accession.number178810en_US
Appears in Collections:MASTERS' THESES (E & C)

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