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|Title:||COMPARATIVE STUDY OF ULTRASONIC AMPLIFICATION BY PIEZO-ELECTRIC SEMICONDUCTORS WITH SPECIAL REFERENCE TO INDIUM ANTIMONIDE|
|Authors:||Joshi, B. P.|
|Keywords:||ELECTRONICS AND COMPUTER ENGINEERING;ELECTRONICS AND COMPUTER ENGINEERING;ELECTRONICS AND COMPUTER ENGINEERING;ELECTRONICS AND COMPUTER ENGINEERING|
|Abstract:||This thesis embodies the topic of ultrasonic amplification by piezo-electric semiconductors. The compounds considered are CdS, CdSe, ZnS , ZnO which are of. Wurzite structure and InSb which is~f Zinc blende structure, while CdS find a popular appliction in this field, the behaviour of some crystals. are yet to be investigated. CdS is considered, here , again in order to compare its characteristic with other materials. The frequency response of above mentioned materials has been (alculated by applying different values of d.c. electric field... The special feature of the mobility of InSb is the subject of particular inte-rest. After examining the behaviour of InSb its ampli-fication characteristics are studied at two temperatures 770K and Saco K, After a brief introduction to the subject, we review In Chapter II, the very first experiment which showed the feasibility of amplification of ultrasonic waves by p& zoelectric semiconductors. This is followed by a theoretical explanation. Chapter Il deals' with ca .culation of frequency,gain response of different materials. The next Chapter deals with the explanation of the theoretical results obtained.. Finally scope ` for future work is outlined|
|Research Supervisor/ Guide:||Kamal, A. K.|
|Appears in Collections:||MASTERS' DISSERTATIONS (E & C)|
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