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|Title:||GENERALISED IMPEDANCE EXPRESSION OF AN AVALANCHE DIODE|
|Authors:||Salgar, Satish Mahadev|
|Keywords:||ELECTRONICS AND COMPUTER ENGINEERING;ELECTRONICS AND COMPUTER ENGINEERING;ELECTRONICS AND COMPUTER ENGINEERING;ELECTRONICS AND COMPUTER ENGINEERING|
|Abstract:||Small signal analysis in a very generalized nature of the Impact Ionization Avalanche Transit Time diode, forms the content of this thesis. Fundamental equations governing the behaviour of electron-holy plasma in the space charge region of a p»n junction biased into avalanche breakdown are first considered. These equations are than utilized and the expression for the dynamic impedance of the diode derived. No restrictive assumption has been made while deriving expressions for constituents of the diode impedance. The numerical evaluation of resulting expressions are quite comp' li catsd, so such so that a digital computer is employed# Values of R, L and ' comprising the diode impedance are carr led out at different frequencies. Insertion of actual pract- ical data in these expressions shows the presence of negative conductance even at frequencies much lower than those reported earlier.|
|Research Supervisor/ Guide:||Singh, Raghuvir|
|Appears in Collections:||MASTERS' DISSERTATIONS (E & C)|
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