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dc.contributor.authorGrover, Ashok Kumar-
dc.date.accessioned2014-11-18T07:49:57Z-
dc.date.available2014-11-18T07:49:57Z-
dc.date.issued1970-
dc.identifierM.Techen_US
dc.identifier.urihttp://hdl.handle.net/123456789/9016-
dc.guideKamal, A. K.-
dc.description.abstract131 .0 cAoct~tstic~n, ~a 1ca t o I cn ,gOtiOn tho ttvcot 1d cu ont of C3AoPu locoz'o„ undo ocrb► C c rooOUL'O. t cnP pllyatCol pXOpQthDO can bt I r o tau tho o? troohold cuzont ct high ppccouro$ 'ho vV="Lotgnn of moo t2th prcouuS-o at tclZ on with cccpooltton Of° gc c3icuic ed thcotte1ly and plot t. Tho v fttion off` now with L>000w'o oid cc ontt.on in includod Into tho cnIculotiona o tho thothoid cwz,ont donotty, Tho thooc' cc .cno1yoio is bonod on an oz inatton of to olat. o dl otrlbution of tho cha. c CnrLozo in tho vol2oy ) c t (103), cn tho C1yto1 to bSoct t hrontattc p ont a o. Thin hen t^on colculotoct for dfforont t 1uoc of ccnpooiton Out, t: hnvo c ►n daood :ho donor ).ovolo associated with volloy ( 0) on 1 tho band tall c oocItcd with tho vo11ot. (0 O) olco. Tho c ' ccc of donor lovol to dominant of t i or rp:icouz oc, n thoy, ctcrt. contbuting oioct,ono to tho volloy (00) , Tho ofcct of band tai' gc to trap coma of tho a1llct fO toxoby vcductn tho nurbo of cnr ic1O ovci1a to Co.". bnotion. Tho n o of ciact nn cppcd in tho boo i of incvoocoo with p oar ► UL O n cc e of a:. Tho thotho1d cu cent is cô1cuLdtcc by totini o ecco mt both tho bcrd tolling 4 IGxt and don o ' lovol. xt LO foe1 foe that tho t~: 'oot o 0th?_ 'cat Vt OOC vnpld,l y Pot' hiçjot Vol Ua c Of caooition * n* c ilo It i natoc.aoc c1cwly fo ctUen_US
dc.language.isoenen_US
dc.subjectELECTRONICS AND COMPUTER ENGINEERINGen_US
dc.subjectELECTRONICS AND COMPUTER ENGINEERINGen_US
dc.subjectELECTRONICS AND COMPUTER ENGINEERINGen_US
dc.subjectELECTRONICS AND COMPUTER ENGINEERINGen_US
dc.titleBEHAVIOUR OF THRESHOLD CURRENT DENSITY OF Ga Asp Psen_US
dc.typeM.Tech Dessertationen_US
dc.accession.number106594en_US
Appears in Collections:MASTERS' THESES (E & C)

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