COMPUTER ANALYSIS AND EQUIVALENT CIRCUIT MODEL OF AN IDEAL MOS DIODE

Abstract

Complete maths=mati cal analysis of an ideal MOS diode, at low frequency, and a simplif; ed annalys?.s of the diode, at high frequency, is carried out. The difference in the rrr. chari sm of the charge-- storage process of an 110S diode, and of the commonly encountered metal plate capacitor is brought into focus in the light of the recombination— generation mechanisms. The role of the recombination— qen ration and they replaccr~F nt mechanisms on the frequency dependence of the i490S capaci tanceee is described. The equivalent circuit model of an ideal MOS diode, applicable at all frequencies, is proposed, in view of the role played by the aforementioned mechanisms. Finally, computer programs have been developed to implc?mert the developed mathrmati cal rilati_onships, thus facilitating for obtaining the ideal curves at low frequency, and, relatively less accurate curves at high frpquern cy for an ideal MOS diprie,