1. Shodhbhagirathi @ IITR
  2. ELECTRONICS AND COMMUNICATION ENGINEERING (FORMERLY ELECTRONICS & COMPUTER ENGINEERING)
  3. MASTERS' THESES (E & C)
Please use this identifier to cite or link to this item: http://localhost:8081/xmlui/handle/123456789/8963
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dc.contributor.authorVerma, Arun Kumar-
dc.date.accessioned2014-11-18T07:04:06Z-
dc.date.available2014-11-18T07:04:06Z-
dc.date.issued1984-
dc.identifierM.Techen_US
dc.identifier.urihttp://hdl.handle.net/123456789/8963-
dc.guideSarkar, Sankar-
dc.description.abstractThe behaviour of a dual diode Gunn oscillator has been studied. Both theoretical and experimental study has been carried out. It is found that much depends on the individual diode behaviour and load conditions. The influ-ence of d.c. bias voltage on the power output has been found to vary over the applied bias voltage range.en_US
dc.language.isoenen_US
dc.subjectELECTRONICS AND COMPUTER ENGINEERINGen_US
dc.subjectELECTRONICS AND COMPUTER ENGINEERINGen_US
dc.subjectELECTRONICS AND COMPUTER ENGINEERINGen_US
dc.subjectELECTRONICS AND COMPUTER ENGINEERINGen_US
dc.titleA STUDY OF DUAL DIODE GUNN OSCILLATORen_US
dc.typeM.Tech Dessertationen_US
dc.accession.number178087en_US
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