1. Shodhbhagirathi @ IITR
  2. ELECTRONICS AND COMMUNICATION ENGINEERING (FORMERLY ELECTRONICS & COMPUTER ENGINEERING)
  3. MASTERS' THESES (E & C)
Please use this identifier to cite or link to this item: http://localhost:8081/xmlui/handle/123456789/8944
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dc.contributor.authorSinha, S. R. P.-
dc.date.accessioned2014-11-18T06:48:32Z-
dc.date.available2014-11-18T06:48:32Z-
dc.date.issued1984-
dc.identifierM.Techen_US
dc.identifier.urihttp://hdl.handle.net/123456789/8944-
dc.language.isoenen_US
dc.subjectELECTRONICS AND COMPUTER ENGINEERINGen_US
dc.subjectALUMINA AND NATIVE OXIDE COMPOSITE LAYERen_US
dc.subjectWET ANODISATION PROCESSen_US
dc.subjectSURFACE PASSIVATIONen_US
dc.titleGROWTH OF ALUMINA AND NATIVE OXIDE COMPOSITE LAYER BY WET ANODISATION PROCESS FOR SURFACE PASSIVATION OF GALLIUM ARSENIDEen_US
dc.typeM.Tech Dessertationen_US
dc.accession.number178070en_US
Appears in Collections:MASTERS' THESES (E & C)

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