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dc.contributor.authorKumar, Virendra-
dc.date.accessioned2014-11-18T05:41:25Z-
dc.date.available2014-11-18T05:41:25Z-
dc.date.issued1981-
dc.identifierM.Techen_US
dc.identifier.urihttp://hdl.handle.net/123456789/8900-
dc.guideAgarwal, R. P.-
dc.guideJain, N. C.-
dc.description.abstractAn 3-3snd trenstetor amplitLer has been designed end fabricated. Microstr ,p lines are used as matching networks at the input and output of the transistor. Microetrip lines are designed and fabricated on a double copper clad glass epoxy sheeto for the - required value of the characteristic impedance. The amplifier design is based on the $--parameters which simplifies the design procedure* A technique is described to measure the 8.-parameters of the transistor with the help of. slotted section and other simple associated equipments available in the laboratory.. Amplifier gain and noise figures are considered in the design. Measurements of the characteristics obtainedd have been presented. 0en_US
dc.language.isoenen_US
dc.subjectELECTRONICS AND COMPUTER ENGINEERINGen_US
dc.subjectELECTRONICS AND COMPUTER ENGINEERINGen_US
dc.subjectELECTRONICS AND COMPUTER ENGINEERINGen_US
dc.subjectELECTRONICS AND COMPUTER ENGINEERINGen_US
dc.titleS-BAND TRANSISTOR AMPLIFIERen_US
dc.typeM.Tech Dessertationen_US
dc.accession.number176938en_US
Appears in Collections:MASTERS' DISSERTATIONS (E & C)

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