GROWTH OF NATIVE OXIDE ON GaAs BY WET ANODIZATION TECHNIQUE

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DC Field	Value	Language
dc.contributor.author	Bawa, S. P.	-
dc.date.accessioned	2014-11-17T11:16:05Z	-
dc.date.available	2014-11-17T11:16:05Z	-
dc.date.issued	1978	-
dc.identifier	M.Tech	en_US
dc.identifier.uri	http://hdl.handle.net/123456789/8848	-
dc.guide	Singh, Raghuvir	-
dc.description.abstract	t anodization Is the most prorasirtg technique for growing: good quality native oxide on GaAs A simple, economical and reliable Process for growing native oxide .. on GaAs by wet anodization, has been successfully developed. d. fixturesand setups required to meet the specific needs of this process and subsequent study of oxide film properties, were designed and developed. Uniform oxide films with film thickness of OOf to 1600 A0 were grown n-GaAs,. The thickness of the grown films is linearly proportional to anodization voltage and growth rate is about 21 40 per- volt. Effects of bath pH illumination and initial anodize'-' t&on current density on the oxide growth haw been observed and reported here	en_US
dc.language.iso	en	en_US
dc.subject	ELECTRONICS AND COMPUTER ENGINEERING	en_US
dc.subject	ELECTRONICS AND COMPUTER ENGINEERING	en_US
dc.subject	ELECTRONICS AND COMPUTER ENGINEERING	en_US
dc.subject	ELECTRONICS AND COMPUTER ENGINEERING	en_US
dc.title	GROWTH OF NATIVE OXIDE ON GaAs BY WET ANODIZATION TECHNIQUE	en_US
dc.type	M.Tech Dessertation	en_US
dc.accession.number	175362	en_US
Appears in Collections:	MASTERS' THESES (E & C)

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