Please use this identifier to cite or link to this item: http://localhost:8081/xmlui/handle/123456789/8848
Title: GROWTH OF NATIVE OXIDE ON GaAs BY WET ANODIZATION TECHNIQUE
Authors: Bawa, S. P.
Keywords: ELECTRONICS AND COMPUTER ENGINEERING;ELECTRONICS AND COMPUTER ENGINEERING;ELECTRONICS AND COMPUTER ENGINEERING;ELECTRONICS AND COMPUTER ENGINEERING
Issue Date: 1978
Abstract: t anodization Is the most prorasirtg technique for growing: good quality native oxide on GaAs A simple, economical and reliable Process for growing native oxide .. on GaAs by wet anodization, has been successfully developed. d. fixturesand setups required to meet the specific needs of this process and subsequent study of oxide film properties, were designed and developed. Uniform oxide films with film thickness of OOf to 1600 A0 were grown n-GaAs,. The thickness of the grown films is linearly proportional to anodization voltage and growth rate is about 21 40 per- volt. Effects of bath pH illumination and initial anodize'-' t&on current density on the oxide growth haw been observed and reported here
URI: http://hdl.handle.net/123456789/8848
Other Identifiers: M.Tech
Research Supervisor/ Guide: Singh, Raghuvir
metadata.dc.type: M.Tech Dessertation
Appears in Collections:MASTERS' DISSERTATIONS (E & C)

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