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|Title:||GROWTH OF NATIVE OXIDE ON GaAs BY WET ANODIZATION TECHNIQUE|
|Authors:||Bawa, S. P.|
|Keywords:||ELECTRONICS AND COMPUTER ENGINEERING;ELECTRONICS AND COMPUTER ENGINEERING;ELECTRONICS AND COMPUTER ENGINEERING;ELECTRONICS AND COMPUTER ENGINEERING|
|Abstract:||t anodization Is the most prorasirtg technique for growing: good quality native oxide on GaAs A simple, economical and reliable Process for growing native oxide .. on GaAs by wet anodization, has been successfully developed. d. fixturesand setups required to meet the specific needs of this process and subsequent study of oxide film properties, were designed and developed. Uniform oxide films with film thickness of OOf to 1600 A0 were grown n-GaAs,. The thickness of the grown films is linearly proportional to anodization voltage and growth rate is about 21 40 per- volt. Effects of bath pH illumination and initial anodize'-' t&on current density on the oxide growth haw been observed and reported here|
|Research Supervisor/ Guide:||Singh, Raghuvir|
|Appears in Collections:||MASTERS' DISSERTATIONS (E & C)|
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