Please use this identifier to cite or link to this item:
|Title:||A STUDY OF IMPURITY DISTRIBUTION DEPENDENCE OF MESFET GATE-DRAIN BREAKDOWN VOLTAGE|
|Keywords:||ELECTRONICS AND COMPUTER ENGINEERING;BVGD;MESFET GATE-DRAIN;BREAKDOWN VOLTAGE|
|Abstract:||Output power of MESFET depends on voltage applied between gate and drain (VGD)' VGD is limited by breakdown voltage between gate and drain. Thus the BVGD is significant factor that limits the output power of a MESFET. The influence of doping profile on the gate-drain breakdown voltage has been studied. It is found that Gaussian distribution of impurity concentration gives rise to very high breakdown voltage. Uniform and complementary error function distribution results in low gate-drain breakdown voltages. Thus, Gussian distribution is preferable for MESFET- substrate.,|
|Research Supervisor/ Guide:||Sarkar, S.|
|Appears in Collections:||MASTERS' DISSERTATIONS (E & C)|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.