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dc.contributor.authorSingh, Raj Vir-
dc.date.accessioned2014-10-09T07:30:29Z-
dc.date.available2014-10-09T07:30:29Z-
dc.date.issued1984-
dc.identifierPh.Den_US
dc.identifier.urihttp://hdl.handle.net/123456789/5380-
dc.guideSingal, C. M.-
dc.description.abstractIn the present days of energy crisis, the renewable sources of energy have received considerable attention. The main renewable source of energy is solar energy. bong the photovoltaic devices, for conversion of solar energy to electrical energy, the silicon solar cells are showing their potentiality because of its established technology and the abundance of silicon material. Open circuit voltage (p0) is one of the important parameters controlling the efficiency of the silicon solar cells. It is defined as the reduction in the built-in potential barrier under the action o f bias. The open circuit voltage (Voc) of'back surface field (n+ -p-p+) silicon solar cells is higher than that of the conventional. silicon solar cells (n+-p), because of the additional low high junction present at the back surface of the solar cell, giving rise to the back surface field (BSF).en_US
dc.language.isoenen_US
dc.subjectPHYSICSen_US
dc.subjectOPEN CIRCUIT VOLTAGEen_US
dc.subjectn+-p-p+ SILICON SOLAR CELLSen_US
dc.subjectCONCENTRATED SUN LIGHTen_US
dc.titleOPEN CIRCUIT VOLTAGE OF n+-p-p+ SILICON SOLAR CELLS UNDER CONCENTRATED SUN LIGHTen_US
dc.typeDoctoral Thesisen_US
dc.accession.number178160en_US
Appears in Collections:DOCTORAL THESES (Physics)

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