Please use this identifier to cite or link to this item: http://localhost:8081/xmlui/handle/123456789/5380
Title: OPEN CIRCUIT VOLTAGE OF n+-p-p+ SILICON SOLAR CELLS UNDER CONCENTRATED SUN LIGHT
Authors: Singh, Raj Vir
Keywords: PHYSICS;OPEN CIRCUIT VOLTAGE;n+-p-p+ SILICON SOLAR CELLS;CONCENTRATED SUN LIGHT
Issue Date: 1984
Abstract: In the present days of energy crisis, the renewable sources of energy have received considerable attention. The main renewable source of energy is solar energy. bong the photovoltaic devices, for conversion of solar energy to electrical energy, the silicon solar cells are showing their potentiality because of its established technology and the abundance of silicon material. Open circuit voltage (p0) is one of the important parameters controlling the efficiency of the silicon solar cells. It is defined as the reduction in the built-in potential barrier under the action o f bias. The open circuit voltage (Voc) of'back surface field (n+ -p-p+) silicon solar cells is higher than that of the conventional. silicon solar cells (n+-p), because of the additional low high junction present at the back surface of the solar cell, giving rise to the back surface field (BSF).
URI: http://hdl.handle.net/123456789/5380
Other Identifiers: Ph.D
Research Supervisor/ Guide: Singal, C. M.
metadata.dc.type: Doctoral Thesis
Appears in Collections:DOCTORAL THESES (Physics)

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