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Title: | OPEN CIRCUIT VOLTAGE OF n+-p-p+ SILICON SOLAR CELLS UNDER CONCENTRATED SUN LIGHT |
Authors: | Singh, Raj Vir |
Keywords: | PHYSICS;OPEN CIRCUIT VOLTAGE;n+-p-p+ SILICON SOLAR CELLS;CONCENTRATED SUN LIGHT |
Issue Date: | 1984 |
Abstract: | In the present days of energy crisis, the renewable sources of energy have received considerable attention. The main renewable source of energy is solar energy. bong the photovoltaic devices, for conversion of solar energy to electrical energy, the silicon solar cells are showing their potentiality because of its established technology and the abundance of silicon material. Open circuit voltage (p0) is one of the important parameters controlling the efficiency of the silicon solar cells. It is defined as the reduction in the built-in potential barrier under the action o f bias. The open circuit voltage (Voc) of'back surface field (n+ -p-p+) silicon solar cells is higher than that of the conventional. silicon solar cells (n+-p), because of the additional low high junction present at the back surface of the solar cell, giving rise to the back surface field (BSF). |
URI: | http://hdl.handle.net/123456789/5380 |
Other Identifiers: | Ph.D |
Research Supervisor/ Guide: | Singal, C. M. |
metadata.dc.type: | Doctoral Thesis |
Appears in Collections: | DOCTORAL THESES (Physics) |
Files in This Item:
File | Description | Size | Format | |
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TH PHD 178160.pdf | 9.27 MB | Adobe PDF | View/Open |
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