Please use this identifier to cite or link to this item: http://localhost:8081/xmlui/handle/123456789/4062
Title: RELIABILITY OF MOS DEVICES
Authors: Upadhyay, Nitin Kumar
Keywords: PHYSICS;MOS DEVICES;NEGATIVE BIAS TEMPERATURE INSTABILITY;HOT CARRIER INJECTION
Issue Date: 2012
Abstract: The scaling trends in CMOS technology and operating conditions give rise to serious degradation mechanisms such as Negative Bias Temperature Instability (NBTI) and Hot Carrier Injection (HCI) in MOSFETs. These mechanisms affect the MOSFET's performance and give threatening the circuit and product lifetimes. The aging phenomena, on top of process variations, translate into complexity and reduced design margin for circuits. A very important factor in the reliability of MOS devices is the stability of the threshold voltage. This dissertation examines the effects of different form of bias stresses at different temperatures on the drift in the threshold voltage of MOS field effect transistors.
URI: http://hdl.handle.net/123456789/4062
Other Identifiers: M.Tech
Research Supervisor/ Guide: Tondon, V. K.
Manhas, Sanjeev
metadata.dc.type: M.Tech Dessertation
Appears in Collections:MASTERS' THESES (Physics)

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