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dc.contributor.authorDaulatabad, Shreeniwas-
dc.date.accessioned2014-10-05T08:35:22Z-
dc.date.available2014-10-05T08:35:22Z-
dc.date.issued2005-
dc.identifierM.Techen_US
dc.identifier.urihttp://hdl.handle.net/123456789/3977-
dc.guideGanguli, Tapas-
dc.guideNath, Rabinder-
dc.description.abstractA Chemical Vapor Deposition System was fabricated for deposition of Zinc oxide films. The Zinc Acetylacetonate was used as precursor. The Zinc oxide films were deposited on quartz substrate by pyrolysis of Zinc Acetylacetonate. Different growth run of Zinc Oxide was done for the optimization of good quality of films. Variation of temperature was studied while other parameters like flow rates of oxygen and nitrogen was maintained constant. The Zinc oxide samples were characterized using absorption spectrum, X-Ray diffraction techniques, Hall measurements, resistivity measurements and Photoluminescence measurements. We were able to grow good quality films of Zinc Oxide films. The system was fabricated and film characterization was done at CAT Indore. High purity Nitrogen (99.995%) was used as carrier gas. The deposition temperatures were maintained in range of 350°C to 600 °C.en_US
dc.language.isoenen_US
dc.subjectPHYSICSen_US
dc.subjectFABRICATION ZnOen_US
dc.subjectVAPOR DEPOSITIONen_US
dc.subjectFABRICATIONen_US
dc.titleFABRICATION OF CHEMICAL VAPOR DEPOSITION SYSTEM FOR ZnOen_US
dc.typeM.Tech Dessertationen_US
dc.accession.numberG12484en_US
Appears in Collections:MASTERS' THESES (Physics)

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