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|Title:||FABRICATION OF CHEMICAL VAPOR DEPOSITION SYSTEM FOR ZnO|
|Abstract:||A Chemical Vapor Deposition System was fabricated for deposition of Zinc oxide films. The Zinc Acetylacetonate was used as precursor. The Zinc oxide films were deposited on quartz substrate by pyrolysis of Zinc Acetylacetonate. Different growth run of Zinc Oxide was done for the optimization of good quality of films. Variation of temperature was studied while other parameters like flow rates of oxygen and nitrogen was maintained constant. The Zinc oxide samples were characterized using absorption spectrum, X-Ray diffraction techniques, Hall measurements, resistivity measurements and Photoluminescence measurements. We were able to grow good quality films of Zinc Oxide films. The system was fabricated and film characterization was done at CAT Indore. High purity Nitrogen (99.995%) was used as carrier gas. The deposition temperatures were maintained in range of 350°C to 600 °C.|
|Appears in Collections:||MASTERS' DISSERTATIONS (Physics)|
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