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http://localhost:8081/xmlui/handle/123456789/3951Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Sharma, Shweta | - |
| dc.date.accessioned | 2014-10-05T07:23:59Z | - |
| dc.date.available | 2014-10-05T07:23:59Z | - |
| dc.date.issued | 2004 | - |
| dc.identifier | M.Tech | en_US |
| dc.identifier.uri | http://hdl.handle.net/123456789/3951 | - |
| dc.guide | Sarkar, S. | - |
| dc.guide | Tondon, V. K. | - |
| dc.description.abstract | In the present work, an improved analytical model for current-voltage relationship for DGMOSFET is developed by taking into account the effects ofMulti-subband occupancy and Drain Induced Barrier Lowering (DIBL). The current-voltage characteristics obtained by the use of this model are compared with experimental and simulation results reported in literature. The effects of backscattering on current-volatge characteristics are also studied. | en_US |
| dc.language.iso | en | en_US |
| dc.subject | PHYSICS | en_US |
| dc.subject | MOSFET | en_US |
| dc.subject | DOUBLE GATE | en_US |
| dc.subject | DGMOSFET | en_US |
| dc.title | AN ANALYTICAL STUDY OE DOUBLE--GATE MOSFET | en_US |
| dc.type | M.Tech Dessertation | en_US |
| dc.accession.number | G11799 | en_US |
| Appears in Collections: | MASTERS' THESES (Physics) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| PHDG11799.pdf | 3.13 MB | Adobe PDF | View/Open |
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