Please use this identifier to cite or link to this item:
http://localhost:8081/xmlui/handle/123456789/3951| Title: | AN ANALYTICAL STUDY OE DOUBLE--GATE MOSFET |
| Authors: | Sharma, Shweta |
| Keywords: | PHYSICS;MOSFET;DOUBLE GATE;DGMOSFET |
| Issue Date: | 2004 |
| Abstract: | In the present work, an improved analytical model for current-voltage relationship for DGMOSFET is developed by taking into account the effects ofMulti-subband occupancy and Drain Induced Barrier Lowering (DIBL). The current-voltage characteristics obtained by the use of this model are compared with experimental and simulation results reported in literature. The effects of backscattering on current-volatge characteristics are also studied. |
| URI: | http://hdl.handle.net/123456789/3951 |
| Other Identifiers: | M.Tech |
| Research Supervisor/ Guide: | Sarkar, S. Tondon, V. K. |
| metadata.dc.type: | M.Tech Dessertation |
| Appears in Collections: | MASTERS' THESES (Physics) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| PHDG11799.pdf | 3.13 MB | Adobe PDF | View/Open |
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