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|Title:||GROWTH AND CHARACTERIZATION OF GaAs AND InGaP EPI-LAVER BY MOCVD FOR SOLAR CELL APPLICATION|
|Keywords:||PHYSICS;GaAs EPI-LAVER;InGaP;EPI-LAVER SOLAR CELL|
|Abstract:||Epi-layers of GaAs and In,,Ga1..P were grown on semi insulating (100) 2° off towards (110) GaAs substrate by the Metal Organic Chemical Vapour Deposition (MOCVD) technique. A single junction GaAs solar cell was grown on n-type Ge substrate with orientation (100) 6° off towards (110). Different growth run of GaAs was done for the optimization of good quality of epilayers. Variation of VIII ratio was studied while other parameters like growth temperature and pressure was kept constant. Carbon incorporation in the epi-layer was also studied. The GaAs samples were characterized using Stain etching, Hall measurement and Photoluminescence measurements. We were able to grow good quality of GaAs epilayers. Growth of lattice matched epi-layer InXGai_XP/GaAs were done at TIFR. The characterization of the grown epi-layers was done using ECV technique. Simulation studies were done using software called MadMax. Single junction GaAs solar cell was grown on n-type Ge substrate with orientation (100) 6° off towards (110). The characterization of solar cell was done using ECV technique. XRD simulation was done for the composition of window layer.|
|Research Supervisor/ Guide:||Haidar, T.|
|Appears in Collections:||MASTERS' THESES (Physics)|
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