Please use this identifier to cite or link to this item: http://localhost:8081/xmlui/handle/123456789/3936
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dc.contributor.authorSingh, Charan-
dc.date.accessioned2014-10-05T07:11:57Z-
dc.date.available2014-10-05T07:11:57Z-
dc.date.issued2003-
dc.identifierM.Techen_US
dc.identifier.urihttp://hdl.handle.net/123456789/3936-
dc.guideNath, R.-
dc.guideSarkar, S.-
dc.guideVerma, G. D.-
dc.description.abstractThis report aim to fabricate and study the metal oxide semiconductor (MOS) structure. The results of a comprehensive study of electrical characteristics of thermally grown oxide and silicon wafers are presented here. The MOS parameters such as flat band voltage, threshold voltage have been calculated. The current-voltage characteristics of MOS and influence of semiconductor barrier tunneling on the c-v characteristics of tunnel metal-oxide-semiconductor diode (quality factor) have also been obtained.en_US
dc.language.isoenen_US
dc.subjectPHYSICSen_US
dc.subjectMOS STRUCTUREen_US
dc.subjectFABRICATION MOSen_US
dc.subjectSILICON WAFERSen_US
dc.titleFABRICATION AND CHARACTERIZATION OF MOS STRUCTUREen_US
dc.typeM.Tech Dessertationen_US
dc.accession.numberG11381en_US
Appears in Collections:MASTERS' DISSERTATIONS (Physics)

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