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http://localhost:8081/xmlui/handle/123456789/3936Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Singh, Charan | - |
| dc.date.accessioned | 2014-10-05T07:11:57Z | - |
| dc.date.available | 2014-10-05T07:11:57Z | - |
| dc.date.issued | 2003 | - |
| dc.identifier | M.Tech | en_US |
| dc.identifier.uri | http://hdl.handle.net/123456789/3936 | - |
| dc.guide | Nath, R. | - |
| dc.guide | Sarkar, S. | - |
| dc.guide | Verma, G. D. | - |
| dc.description.abstract | This report aim to fabricate and study the metal oxide semiconductor (MOS) structure. The results of a comprehensive study of electrical characteristics of thermally grown oxide and silicon wafers are presented here. The MOS parameters such as flat band voltage, threshold voltage have been calculated. The current-voltage characteristics of MOS and influence of semiconductor barrier tunneling on the c-v characteristics of tunnel metal-oxide-semiconductor diode (quality factor) have also been obtained. | en_US |
| dc.language.iso | en | en_US |
| dc.subject | PHYSICS | en_US |
| dc.subject | MOS STRUCTURE | en_US |
| dc.subject | FABRICATION MOS | en_US |
| dc.subject | SILICON WAFERS | en_US |
| dc.title | FABRICATION AND CHARACTERIZATION OF MOS STRUCTURE | en_US |
| dc.type | M.Tech Dessertation | en_US |
| dc.accession.number | G11381 | en_US |
| Appears in Collections: | MASTERS' THESES (Physics) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| PHDG11381.pdf | 2.66 MB | Adobe PDF | View/Open |
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