Please use this identifier to cite or link to this item:
http://localhost:8081/xmlui/handle/123456789/3936| Title: | FABRICATION AND CHARACTERIZATION OF MOS STRUCTURE |
| Authors: | Singh, Charan |
| Keywords: | PHYSICS;MOS STRUCTURE;FABRICATION MOS;SILICON WAFERS |
| Issue Date: | 2003 |
| Abstract: | This report aim to fabricate and study the metal oxide semiconductor (MOS) structure. The results of a comprehensive study of electrical characteristics of thermally grown oxide and silicon wafers are presented here. The MOS parameters such as flat band voltage, threshold voltage have been calculated. The current-voltage characteristics of MOS and influence of semiconductor barrier tunneling on the c-v characteristics of tunnel metal-oxide-semiconductor diode (quality factor) have also been obtained. |
| URI: | http://hdl.handle.net/123456789/3936 |
| Other Identifiers: | M.Tech |
| Research Supervisor/ Guide: | Nath, R. Sarkar, S. Verma, G. D. |
| metadata.dc.type: | M.Tech Dessertation |
| Appears in Collections: | MASTERS' THESES (Physics) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| PHDG11381.pdf | 2.66 MB | Adobe PDF | View/Open |
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