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|Title:||FABRICATION AND CHARACTERIZATION OF MOS STRUCTURE|
|Keywords:||PHYSICS;MOS STRUCTURE;FABRICATION MOS;SILICON WAFERS|
|Abstract:||This report aim to fabricate and study the metal oxide semiconductor (MOS) structure. The results of a comprehensive study of electrical characteristics of thermally grown oxide and silicon wafers are presented here. The MOS parameters such as flat band voltage, threshold voltage have been calculated. The current-voltage characteristics of MOS and influence of semiconductor barrier tunneling on the c-v characteristics of tunnel metal-oxide-semiconductor diode (quality factor) have also been obtained.|
|Research Supervisor/ Guide:||Nath, R.|
Verma, G. D.
|Appears in Collections:||MASTERS' DISSERTATIONS (Physics)|
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