Please use this identifier to cite or link to this item: http://localhost:8081/xmlui/handle/123456789/3936
Title: FABRICATION AND CHARACTERIZATION OF MOS STRUCTURE
Authors: Singh, Charan
Keywords: PHYSICS;MOS STRUCTURE;FABRICATION MOS;SILICON WAFERS
Issue Date: 2003
Abstract: This report aim to fabricate and study the metal oxide semiconductor (MOS) structure. The results of a comprehensive study of electrical characteristics of thermally grown oxide and silicon wafers are presented here. The MOS parameters such as flat band voltage, threshold voltage have been calculated. The current-voltage characteristics of MOS and influence of semiconductor barrier tunneling on the c-v characteristics of tunnel metal-oxide-semiconductor diode (quality factor) have also been obtained.
URI: http://hdl.handle.net/123456789/3936
Other Identifiers: M.Tech
Research Supervisor/ Guide: Nath, R.
Sarkar, S.
Verma, G. D.
metadata.dc.type: M.Tech Dessertation
Appears in Collections:MASTERS' DISSERTATIONS (Physics)

Files in This Item:
File Description SizeFormat 
PHDG11381.pdf2.66 MBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.