STUDY OF MOS STRUCTURE USINGTHERMALLY STIMULATED CURRENT - TECHNIQUE

Abstract

The theme of this dissertation is first to fabricate the MOS structure by thermal oxidation method and then to study the presence of mobile ions in the oxide layer using thermally stimulated current method. The thermally stimulated current was observed in the temperature range 20 °C to 120 °C.One peak was obtained in the vicinity of 60 °C. To confirm the type of this mobile ion, measurements on samples intentionally contaminated with sodium shows that the peak is due to sodium ions in the oxide layer. A theoretical fit to the experimental data was also achieved and activation energy and emission time constant was calculated.