3®DIMENSIONAL SIMULATION OF SINGLE EVENT UPSET OF 6T-SOI BASED 24 nm —FINFET -SRAM CELL

Abstract

Recent years the radiation effects on modern electronic devices are considered to be an important task, due to continues technology scaling and minimal nodal capacitances. Heavy ion impacts on electronic devices causes the large amount of electron-hole pair generation along it's track. The generated charge under the established electric fields would create the electrical disruptions and changes in node voltages. This became worse for the current technologies due to reduced feature sizes and supply voltages. In this report, we present radiation particle interactions, effects on FinFET SRAM cell. The main objective of this report is to benchmark the FinFET to get the required performance followed by 3-dimensional numerical simulation of 6T-SRAM cell as a contiguous block of silicon and to study the impact of heavy ions on the data states of the cell. We studied the critical charge (Q,.1-i,) characterization of the designed SRAM cell and found the SEU threshold Linear Energy Transfer (LET).