ELECTRICAL AND OPTICAL HEATING OF WAVELENGTH SELECTIVE MICRORING SWITCH

Abstract

GST (Ge2Sb2Te5) is a phase change material that has recently gained attention as a potential materials for photonic devices due of their fast write and read speeds, high scalability, reversible phase change, excellent data storage, storage capacity on many levels and low power consumption. Electrical and optical heating of phase change materials (GST) embedded silicon microring with a high visual contrast during the GST phase shift investigate and analyse, Also in the GST amorphous phase has a high thermo-optic coefficient. Extinction ratios of 18.8 dB and 25.6 dB achieved at through and drop ports, respectively. In electrical and optical heating, GST’s resonance wavelength shift of almost 0.66 nm/µm and 0.40 nm/µm per unit length of GST, respectively achieved . Tuning efficiency in electrical and optical tuning is almost 0.86 nm/mW and 1.05 nm/mW, respectively. The tuning range in electrical and optical configuration is almost 4.57 nm and 4.04 nm, respectively for the LGST = 7 µm. Finally the time domain analysis of amorphization and crystallization for 1 µm to 7 µm length of GST presented. In optical heating 80% fall time down in amorphous to crystalline is 54.53 ns and time to reach at room temperature is 1421.04 ns for the 1 µm length of GST. For crystalline to amorphous 80% fall time down in optical heating is 36.02 ns and time to reach at room temperature is 1006.51 ns for the 1 µm length of GST. The same device can also be suitably used for tunable wavelength switch and Wavelength Selective optical power attenuator. A maximum attenuation of around 19 dB at wavelength around 1545 nm at through port with 1 µm length of GST with only 0.6 mW and 1.53 mW power consumption in electrical and optical heating cases achieved.